Study of the optical characteristics of semiconductor nanostructures taking into account the features of the electron-phonon interaction

The proposal is devoted to the modification of optical properties (absorption coefficients and refractive index changes) of semiconductor nanostructures by means of phonon engineering and external fields. To discover new possibilities for the instrumental application of semiconductor nanostructures, the design of the spectrum of optical phonons with a choice of structural materials and geometric parameters, and hence the possibility of controlling the electron-phonon interaction, will be considered. It will be implemented taking into account the influence of the interface boundaries in the system on the phonon models. The influence of impurities, electric and magnetic fields, as well as such important parameters on the optical properties of polar semiconductor nanostructures as intermediate distances of energy levels, the strength of the electron-phonon interaction, temperature, geometric parameters of the system, etc., will be revealed. It is expected that the results obtained will reveal the optimal characteristics of the use of semiconductor nanostructures as structural elements of optoelectronic devices.